Semiconductor device

Details Semiconductor device Semiconductor device

1998-02-26

2000-05-23

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257356, H01L 2362, H01L 2976, H01L 31119

Patent

active

060668806

ABSTRACT:
Performance for a gate insulation film of an insulated gate transistor is enhanced. A depletion layer is generated in a region of a gate electrode 12 which is provided in contact with a gate insulation film 4 in an OFF state, and the depletion layer disappears or a width thereof is reduced in an ON state.

REFERENCES:
patent: 4990974 (1991-02-01), Vinal
patent: 5471081 (1995-11-01), Fishbein et al.
Narain D. Arora, et al., "Modeling the Polysilicon Depletion Effect and Its Impact on Submicrometer CMOS Circuit Performance," IEEE Transactions On Electron Devices, vol. 42, No. 5, (May 1995), pp. 935-943.
B. Ricco, et al., "Characterization of Polysilicon-Gate Depletion in MOS Structures," IEEE Electron Device Letters, vol. 17, No. 3, (Mar. 1996), pp. 103-105.
Francis K. Chai, et al., "Effects of Scaling Thickness and Niobium Doping Level on Ferroelectric Thin Film Capacitor Memory Operation," IEEE International Electron Device Meeting 1995, pp. 123-125.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1838962