Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-05-06
2000-05-23
Hiteshew, Felisa
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438693, H01L 21302
Patent
active
060665645
ABSTRACT:
Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, and monitoring the level of the separate product as the target film is removed.
REFERENCES:
patent: 3503711 (1970-03-01), Skala
patent: 3904371 (1975-09-01), Neti et al.
patent: 4493745 (1985-01-01), Chen et al.
patent: 4512964 (1985-04-01), Vayenas
patent: 4812416 (1989-03-01), Hewig et al.
patent: 4961834 (1990-10-01), Kuhn et al.
patent: 4975141 (1990-12-01), Greco et al.
patent: 5234567 (1993-08-01), Hobbs et al.
patent: 5242532 (1993-09-01), Cain
patent: 5242882 (1993-09-01), Campbell
patent: 5256387 (1993-10-01), Campbell
patent: 5395589 (1995-03-01), Nacson
patent: 5399234 (1995-03-01), Yu et al.
patent: 5405488 (1995-04-01), Dimitrelis et al.
patent: 5439551 (1995-08-01), Meikle et al.
patent: 5449314 (1995-09-01), Meikle et al.
patent: 5559428 (1996-09-01), Li et al.
patent: 5647952 (1997-07-01), Chen
patent: 5736462 (1998-04-01), Takabashi et al.
patent: 5795495 (1998-08-01), Meikle
patent: 5836805 (1998-11-01), Obeng
Biolsi, et al, "An Advanced Endpoint Detection Solution for <1% Open Areas", Solid State Technology, Dec. 1996, pp. 59-67.
Economou, et al, "In Situ Monitoring of Etching Uniformity in Plasma Reactors", Solid State Technology, Apr., 1991, pp. 107-111.
Roland, et al, "Endpoint Detecting in Plasma Etching", J. Vac. Sci. Technol. A3(3), May/Jun. 1985, pp. 631-636.
Park, et al, "Real Time Monitoring of NH, Concentration Using Diffusion Scrubber Sampling Technique and Result of Application to the Processing of Chemiacally Amplified Resists", Jpn. J. Appl. Phys. vol. 34 (1995) pp. 6770-6773 Part 1 No. 12B, Dec., 1995.
Carr, et al, Technical Disclosure Bulletin, "End-Point Detection of Chemical/Mechanical Polishing of Circuitized Multilayer Substrates", YO887-0456, vol. 34 No. 4B, Sep. 1991 pp. 406-407.
Carr, et al, Technical Disclosure Bulletin, "End-Point Detection of Chemical/Mechanical Polishing of Thin Film Structures", YO886-0830, vol. 34 No. 4A, Sep. 1991, pp. 198-200.
Rutten, Research Diclosure Endpoint Detection Method for Ion Etching of Material Having a Titaniun Nitride Underlayer, BU890-0132, Feb. 1991, No. 322, Kenneth Mason Publications Ltd, England.
Gilhooly James Albert
Li Leping
Morgan, III Clifford Owen
Wei Cong
Yu Chienfan
Anderson Jay H.
Deo Duy-Vu
Hiteshew Felisa
International Business Machines - Corporation
Mortinger Alison D.
LandOfFree
Indirect endpoint detection by chemical reaction does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Indirect endpoint detection by chemical reaction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Indirect endpoint detection by chemical reaction will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1836743