Indirect endpoint detection by chemical reaction

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

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438693, H01L 21302

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active

060665645

ABSTRACT:
Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, and monitoring the level of the separate product as the target film is removed.

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