Method and structure for improved alignment tolerance in multipl

Details Method and structure for improved alignment tolerance in multipl Method and structure for improved alignment tolerance in multipl

1998-08-25

2000-05-23

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438253, 438256, 438265, 438637, 438639, 438675, H01L 214763

Patent

active

060665521

ABSTRACT:
An improved method and structure which increases the alignment tolerances in multiple, singularized plugs are provided. The invention discloses a novel method for forming individual plug contacts with increased surface area for improved registration between semiconducting layers. Also the improved plug contacts are particularly well suited to receiving contact formations which have any taper to them. IGFETS and other devices formed from this design can be used in a variety of beneficial applications, e.g. logic or memory.

REFERENCES:
patent: 5244534 (1993-09-01), Yu et al.
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5387550 (1995-02-01), Cheffings et al.
patent: 5451546 (1995-09-01), Grubisich et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5569948 (1996-10-01), Kim.
patent: 5580821 (1996-12-01), Mathews et al.
patent: 5658829 (1997-08-01), Mathews et al.
patent: 5710073 (1998-01-01), Jeng et al.
patent: 5776815 (1998-07-01), Pan et al.
patent: 5780339 (1998-07-01), Liu et al.
patent: 5792687 (1998-08-01), Jeng et al.
patent: 5817573 (1998-10-01), Rhodes et al.
patent: 5858865 (1999-01-01), Juengling et al.
patent: 5872048 (1999-02-01), Reinberg

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