Method of manufacturing semiconductor devices using a crystalliz

Details Method of manufacturing semiconductor devices using a crystalliz Method of manufacturing semiconductor devices using a crystalliz

1998-07-21

2000-05-23

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438491, H01L 2184

Patent

active

060665181

ABSTRACT:
In a method of manufacturing a semiconductor device, an insulating film having an opening is formed on an amorphous film 103 containing silicon therein. After catalytic elements are introduced from the opening, the amorphous film 103 is crystallized. Thereafter elements (phosphorus) selected from Group XV are introduced from the opening, and then a heat treatment is conducted to obtain a film having crystallinity. Thereafter, a portion of the film containing silicon into which the catalytic elements and phosphorus is introduced are removed.

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Periodic Table of The Element.

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