Method to form an insulative barrier useful in field emission di

Semiconductor device manufacturing: process – Electron emitter manufacture

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445 24, 445 50, H01L 2100

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active

060665076

ABSTRACT:
A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.

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