Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-03
1997-11-04
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257 57, H01L 2701, H01L 2712, H01L 310392, H01L 2976
Patent
active
056843208
ABSTRACT:
A semiconductor device has a plurality of transistor pairs. Each transistor pair includes a p-channel current path having a pair of p-type current terminal regions arranged by sandwiching a high resistivity first channel region and an n-channel current path having a pair of n-type current terminal regions arranged by sandwiching a high resistivity second channel region. The first channel region and the second channel region exert electric fields on each other by their intrinsic charges and are adjacently arranged so as to serve as a gate. A semiconductor memory device includes a memory element formed by first and second thin film semiconductor layers each including a semiconductor region of the first conductivity type and a semiconductor region of the second conductivity type sandwiching a channel region. A backgate is disposed in a faced relation to the channel region of one of the first and second thin film semiconductor layers which are laminated one atop the other. Alternatively, the memory element is formed by a lamination of four such thin film semiconductor layers and includes a gate for writing disposed opposite the channel region of one of the thin film semiconductor layers which forms one end of the lamination, and an element for reading disposed opposite the channel region of one of the thin film semiconductor layers which forms the other end of the lamination.
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Garnache, R.R., "Complementary FET Memory Cell" IBM Tech Disc. Bull. vol. 18 No. 12 May 1976, pp. 3947-48.
Fujitsu Limited
Meier Stephen
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