Semiconductor memory drive

Details Semiconductor memory drive Semiconductor memory drive

1990-01-10

1992-07-07

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

365190, 365203, G11C 1300

Patent

active

051288966

ABSTRACT:
In a semiconductor memory device comprising memory cells in which first and second potentials correspond to the logic values "0" and "1", the first potential is closer to the second potential than the potential of unselected word lines, by 0.3 V or more. The pull-up transistor is of the N-type, and the pull-down transistor is of the P-type.

REFERENCES:
IEEE International Solid-State Circuits Conference Article entitled "A 288Kb CMOS Pseudo SRAM", pp. 276-277, by H. Kawamoto et al., published Feb. 24, 1984.
IEEE International Solid-State Circuits Conference Article entitled "A 55ns 16Mb DRAM", pp. 246-247, by T. Takeshima et al., published Feb. 17, 1989.
"Micro Computer Memory", pp. 137-156, published on Sep. 30, 1985.

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