Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Differential sensing

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365190, G11C 702

Patent

active

054522544

ABSTRACT:
In a semiconductor memory circuit, when a memory cell is not selected, a pair of complementary data lines connected to the memory cell are short-circuited to be brought to the same potential, and when the memory cell is selected, the short-circuiting is cancelled. Therefore, the complementary data lines are in no way put in a floating condition, and when the memory cell is selected, a voltage difference corresponding to the data to be read out is immediately generated between the complementary data lines. Accordingly, the data is quickly fixed or settled, without being influenced by a preceding read-out data.

REFERENCES:
patent: 4558434 (1985-12-01), Baba
patent: 4939693 (1990-07-01), Tran

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