Metal oxide semiconductor field effect transistor

Details Metal oxide semiconductor field effect transistor Metal oxide semiconductor field effect transistor

1994-04-20

1995-09-19

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257344, H01L 2978, H01L 29784, H01L 29804

Patent

active

054518075

ABSTRACT:
A field effect transistor includes a gate electrode disposed on a first conductivity type semiconductor substrate via an insulating film, a second conductivity type region having a first dopant impurity concentration region in the substrate at the drain side of the gate electrode contacting the insulating film, a second conductivity type region in the substrate having a higher dopant impurity concentration than the first dopant impurity concentration at the source side of the gate electrode contacting the insulating film, and a first conductivity type region in the substrate having a higher dopant impurity concentration than the substrate and surrounding the source region in the substrate. The ON-resistance of the transistor is reduced. The first conductivity type region improves the drain-source breakdown voltage, suppresses variations in the threshold voltage, and reduces the gate-source and gate-drain capacitances.

REFERENCES:
patent: 5304827 (1994-04-01), Malhi et al.

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