Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1993-04-19

1995-09-19

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, 365185, H01L 2968, H01L 2978

Patent

active

054518032

ABSTRACT:
A semiconductor memory device in which source lines for connecting source regions of memory cells disposed in a direction of word lines are composed of conductive films formed on a semiconductor substrate. Gate assemblies including components such as the word lines are formed on the semiconductor substrate. Source regions are formed in self-alignment by using the gate assemblies as masks. Source contact holes are formed above the source regions, and the source lines are in contact with the source regions in the source contact holes. The source lines are composed of conductive films formed on the semiconductor substrate between the adjacent word lines on opposite sides of any of the source regions.

REFERENCES:
patent: 5159431 (1992-10-01), Yoshikawa
patent: 5229632 (1993-07-01), Yoshikawa
patent: 5270240 (1993-12-01), Lee
patent: 5280446 (1994-01-01), Ma et al.
patent: 5282160 (1994-01-01), Yamagata

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