Process for forming stable local interconnect/active area silici

Details Process for forming stable local interconnect/active area silici Process for forming stable local interconnect/active area silici

1994-09-21

1995-09-19

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437192, 437247, 748DIG1, 748DIG19, H01L 21283

Patent

active

054515459

ABSTRACT:
A local interconnect silicide structure (30) for connecting silicon regions (16) to silicon regions (20) separated by oxide regions (24) comprises a first portion of titanium silicide/titanium nitride/titanium silicide contacting the silicon regions and a second portion of titanium/titanium nitride/titanium silicide contacting the oxide regions. The silicide structure is also useful for connecting source/drain regions (14) and polysilicon interconnects (28). Two separate heating steps are employed, separated by an etch step to form the interconnects (34, 36). The first heating step forms (a) titanium silicides with single or polycrystalline silicon, using a first titanium layer (30a) at the bottom of the silicide structure and (b) titanium silicides with amorphous silicon (30d), using a second titanium layer (30c) on top of the titanium nitride layer (30b) on which the amorphous silicon is deposited and then patterned. The second heating step, which is at a higher temperature than the first, converts all the titanium silicides to titanium disilicide.

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