Semiconductor integrated circuit device

Static information storage and retrieval – Systems using particular element – Capacitors

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Details

365189, G11C 1124, G11C 700

Patent

active

048021237

ABSTRACT:
An IC device in accordance with the present invention comprises: a capacitor (1); a plurality of FETs, one (5) of which has a back-gate electrode (9) and constitutes a memory cell with the capacitor; and a voltage source circuit (100) which supplies the back-gate electrode (9) with a prescribed voltage whereby the absolute value of threshold voltage of the FET (5) in the memory cell is made lower than that of the remaining FET(s).

REFERENCES:
patent: 3976948 (1976-08-01), Hirasawa
patent: 4156939 (1979-05-01), Takemae et al.
Moschwitzer and Lunze, Halbleiterelektronik, (1980): 367-369; 490-492.

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