Fault-protected overvoltage switch with expanded signal range

Details Fault-protected overvoltage switch with expanded signal range Fault-protected overvoltage switch with expanded signal range

1994-09-06

1995-08-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257372, 257374, H01L 2702, H01L 2906, H01L 2978

Patent

active

054463033

ABSTRACT:
An integrated-circuit (IC) chip formed with a fault-protected switch comprising three MOS transistors in series. An additional MOS transistor is formed adjacent the center one of the three transistors, and is arranged such that the gates of the two transistors are connected together, the source electrodes of the two transistors are connected together, the backgates form a common region, and the drain of the additional transistor is connected to those backgates.

REFERENCES:
patent: 5389811 (1995-02-01), Poucher et al.

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