Semiconductor device including semiconductor layer having impuri

Details Semiconductor device including semiconductor layer having impuri Semiconductor device including semiconductor layer having impuri

1994-07-13

1995-08-29

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257347, 257496, H01L 2701, H01L 2906

Patent

active

054463017

ABSTRACT:
A semiconductor device capable of effectively preventing a dielectric breakdown of a gate oxide film without adversely affecting the characteristics of a transistor and a process of manufacturing the same are disclosed. The semiconductor device comprises a SOI film 2 whose upper angular parts are rounded off by sputter etching and a gate oxide film 3 formed on SOI film 2 with an almost uniform thickness. Therefore, electric field concentration in the upper angular parts of SOI film 2 is reduced. Furthermore, the control characteristics of the transistor are enhanced by the uniform gate oxide film 3. As a result, a dielectric breakdown of the gate oxide film is effectively prevented without adversely affecting the characteristics of the transistor. Sputter etching enabling processing at a low temperature is used, so that the upper angular parts of SOI film 2 are rounded off without adversely affecting a semiconductor element formed in the lower layer.

REFERENCES:
patent: 4546376 (1985-10-01), Nakata et al.
patent: 4753896 (1988-06-01), Matloubian
patent: 4822751 (1989-04-01), Ishizu et al.
patent: 5089870 (1992-02-01), Haond
"Redeposition--A serious problem in rf sputter etching of structures with micronmeter dimensions", by H. W. Lehmann et al., J. Vac. Sci. Technol., vol. 14, No. 1, Jan./Feb. 1977, pp. 281-284.

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