Semiconductor device configuration with multiple HV-LDMOS transi

Details Semiconductor device configuration with multiple HV-LDMOS transi Semiconductor device configuration with multiple HV-LDMOS transi

1992-11-04

1995-08-29

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257490, 257500, 257776, H01L 27088, H01L 2978

Patent

active

054463009

ABSTRACT:
A semiconductor device is provided having a substrate which includes a floating circuit well with turn on/turn off signals generated by a voltage drop proximate to at least one resistor contained therein, and having high-voltage interconnects to connect the drain terminals of a plurality of LDMOS transistors to the resistor in the floating well and wherein the transistors, resistor and floating well are combined into an integrated structure which eliminates the high voltage interconnect crossovers.

REFERENCES:
patent: 3379941 (1968-04-01), Blanluet
patent: 4661838 (1987-04-01), Wildi et al.
patent: 4678936 (1987-07-01), Holloway
patent: 4878096 (1989-10-01), Shirai et al.
patent: 5003362 (1991-03-01), Lee et al.
patent: 5045900 (1991-09-01), Tamagawa
patent: 5146298 (1992-09-01), Eklund
patent: 5192989 (1993-03-01), Matsushita et al.

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