Semiconductor power devices with alternating conductivity type h

Details Semiconductor power devices with alternating conductivity type h Semiconductor power devices with alternating conductivity type h

1991-09-17

1993-06-01

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

With electric field controlling semiconductor layer having a...

257492, 257287, 257266, 257329, 257655, 257656, H01L 2976, H01L 2970

Patent

active

052162753

ABSTRACT:
A semiconductor power device wherein the reverse voltage across the p.sup.+ -regions(s) and the n.sup.+ -regions(s) is sustained by a composite buffer layer, shortly as CB-layer. The CB-layer contains two kinds of semiconductor regions with opposite types of conduction. These two kinds of regions are alternatively arranged, viewed from any cross-section parallel to the interface between the layer itself and the n.sup.+ (or p.sup.+)-region. Whereas the hitherto-used voltage sustaining layer contains only one kind of semiconductor with single type of conduction in the same sectional view. Design guidelines are also provided in this invention. The relation between the on-resistance in unit area Ron and the breakdown voltage V.sub.B of the CB-layer invented is Ron ocV.sub.B.sup.113 which represents a breakthrough to the conventional voltage sustaining layer, whereas the other performances of the power devices remain almost unchanged.

REFERENCES:
patent: 4754310 (1988-06-01), Coe et al.
patent: 4775881 (1988-10-01), Ploog
"An Ultra-Low On-Resistance Power MOSFET Fabricated . . . ", by Ueda et al., IEEE, pp. 926-930, 1987.
"Self-Aligned MOSFET's with a Specific On-Resistance of . . . ", by Chang et al., IEEE, pp. 2329-2333, 1987.
"Numerical and Experimental Analysis of 500-V Power DMOSFET . . . ,"by Chang et al., IEEE Transactions, vol. 16, NY, Nov. 1989.

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