Semiconductor memory device having memory cells formed in trench

Details Semiconductor memory device having memory cells formed in trench Semiconductor memory device having memory cells formed in trench

1991-04-09

1993-06-01

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257304, 257 67, H01L 2968, H01L 2978, H01L 2992

Patent

active

052162664

ABSTRACT:
A semiconductor memory device includes a memory cell formed in a trench. The trench is formed by a bottom wall formed of a semiconductor substrate and a sidewall extending from the bottom wall and formed of the semiconductor substrate and an insulation layer thereon. A capacitor includes a first electrode formed in the semiconductor substrate, a dielectric film being in contact with the first electrode and formed on the bottom wall and the sidewall portion formed of the semiconductor substrate, and a second electrode formed on the dielectric film. A field effect transistor includes, a gate electrode, and second conductivity type first and second impurity regions formed in a semiconductor sidewall layer. The semiconductor sidewall layer is formed on the sidewall portion formed of the insulation layer. The gate electrode is formed on a side surface of the semiconductor sidewall layer in the trench with an insulating film interposed therebetween. An interconnection layer is formed above the gate electrode in the trench. By forming all the elements constituting the memory cell in the trench, the memory cell can be effectively miniaturized and no parasitic MOS transistor is formed. Isolation width between the memory cells can be reduced. Capacitance of the capacitor can be increased without forming a field effect transistor having an extremely short channel length.

REFERENCES:
patent: 4751557 (1988-06-01), Sunami et al.
patent: 4816884 (1989-03-01), Hwang et al.
K. Sunouchi et al., "A Surrounding Gate Transistor (SGT) Cell for 64/256 Mbit DRAMs", IEEE, 1989, Ch. 2, pp. 23-26.
W. F. Richardson et al., "A Trench Transistor Cross-Point Dram Cell", IEDM Technical Digest, Dec. 1985, pp. 714-717.

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