Method of patterning a metal substrate using spin-on glass as a

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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671687, 671688, 671945, 671950, 717720, 717723, 717725, 717734, H01L 2144

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active

059501065

ABSTRACT:
A method for patterning an underlying metal substrate includes forming a layer of spin-on glass over the metal substrate, forming a layer of photoresist over the spin-on glass, patterning the photoresist, patterning the spin-on glass using the photoresist as a mask, and patterning the metal substrate by applying an etch using the spin-on glass as a hard mask wherein the etch removes the photoresist and partially removes the spin-on glass. In one embodiment, the spin-on glass is patterned by applying a fluorine-based plasma, an aluminum-based metal substrate is patterned by applying a chlorine-based plasma in which an etch selectivity of the metal substrate to the spin-on glass is at least 10:1, and the spin-on glass is removed by applying another fluorine-based plasma.

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