Manufacture of dielectric oxide lamination structure and electro

Details Manufacture of dielectric oxide lamination structure and electro Manufacture of dielectric oxide lamination structure and electro

1996-10-04

1999-09-07

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438640, 438763, H01L 214763

Patent

active

059501030

ABSTRACT:
An impurity supply film made of dielectric oxide material is deposited on the surface of an underlying substrate having a surface layer made of different dielectric oxide material. An impurity absorption film made of the same dielectric oxide material as the surface layer of the underlying substrate is deposited on the impurity supply film. The underlying substrate is heated to replace a fraction of at least one type of constituent atoms other than oxygen atoms in the impurity supply film by a fraction of at least one type of constituent atoms other than oxygen atoms in the surface layer of the underlying substrate and in the impurity absorption film, for the whole thickness of the impurity supply film. A method is provided by which impurities are selectively doped in a dielectric oxide material without leaving an electrical barrier on the surface of the material.

REFERENCES:
patent: 4440841 (1984-04-01), Tabuchi
patent: 5065275 (1991-11-01), Fujisaki et al.
patent: 5643806 (1997-07-01), Miwa et al.
patent: 5663089 (1997-09-01), Tomozawa et al.
patent: 5780351 (1998-07-01), Arita et al.

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