Semiconductor device having increased breakdown voltage and meth

Details Semiconductor device having increased breakdown voltage and meth Semiconductor device having increased breakdown voltage and meth

1996-11-07

1999-09-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, H01L 2976

Patent

active

059491140

ABSTRACT:
A method of fabricating bipolar junction transistors particularly suitable for electrostatic discharge protection and high voltage MOSFETs. In accordance with the invention, a mask covers bird's beaks formed between field oxide layers and doped regions of a semiconductor substrate. A silicide layer is then added to the exposed surface of the doped regions. The mask prevents the silicide layer from overlying the bird's beaks, thereby precluding the silicide layer from degrading the breakdown junction voltage of the transistor.

REFERENCES:
patent: 5027185 (1991-06-01), Liauh
patent: 5659194 (1997-08-01), Iwamatsu et al.

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