Semiconductor laser

Details Semiconductor laser Semiconductor laser

1993-09-13

1994-11-01

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053612710

ABSTRACT:
A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.

REFERENCES:
patent: 4416012 (1983-11-01), Botez et al.
patent: 4581742 (1986-04-01), Botez
patent: 4860298 (1989-08-01), Botez et al.
patent: 5276700 (1994-01-01), Jansen et al.
U.S. Patent Application Ser. No. No. 07/939,901 to Takiguchi et al. (filed Sep. 4, 1992).
Coleman, J. J., et al., "Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers" Applied Physics Letters 37(3):262-263, Aug. 1980.
Yamamoto, S., et al., "Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using .rho.GaAs substrate" Applied Physics Letters 40(5):372-374, Mar., 1982.
Ishikawa, H., et al., "Mode-stabilized separated multiclad layer stripe geometry GaAlAs double heterostructure laser" Applied Physics Letters 36(7):520-522, Apr. 1980.

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