Semiconductor device with reduced capacitance

Details Semiconductor device with reduced capacitance Semiconductor device with reduced capacitance

1997-06-30

1999-09-07

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257340, H01L 2701, H01L 2712

Patent

active

059491086

ABSTRACT:
A process for producing a metal oxide semiconductor (MOS transistor) is provided. The process includes the following steps. At least two trenches are formed at a surface of a first substrate. Oxide is deposited onto the at least two trenches. The at least two trenches each have a surface spaced apart from the surface of the first substrate. A second substrate is placed onto the surface of the first substrate. A layer is delaminated from the first substrate. The layer includes the at least two oxide-filled trenches and a portion of the first substrate. The layer is then bonded to a second substrate. First and second active regions are then formed, in the portion of the first substrate, overlaying the surfaces of the at least two trenches.

REFERENCES:
patent: 5332913 (1994-07-01), Shappir
patent: 5358891 (1994-10-01), Tsang et al.
patent: 5489792 (1996-02-01), Hu et al.
patent: 5567629 (1996-10-01), Kubo
patent: 5580807 (1996-12-01), Sery et al.
patent: 5583067 (1996-12-01), Sanchez

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