Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

1996-11-05

1999-09-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, H01L 2701, H01L 2712, H01L 310392, H01L 2976

Patent

active

059491078

ABSTRACT:
A semiconductor device having CMOS circuits formed on a glass substrate. The CMOS circuits are composed of TFTs. Lightly doped regions are formed only in the N-channel TFTs. When P-channel TFTs are formed, the conductivity type of the lightly doped regions is converted by a boron ion implant. Each CMOS circuit consists of an N-channel TFT having the lightly doped regions and a P-channel TFT having no lightly doped regions.

REFERENCES:
patent: 5434441 (1995-07-01), Inoue et al.
patent: 5569935 (1996-10-01), Takemura et al.
Muller et al, Device Electronics for IC's, pp. 462-463, .COPYRGT.1986.

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