Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-10
1999-09-07
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 66, 257153, 257249, 257316, 257317, 257318, 257319, 257320, H01L 2976
Patent
active
059491027
ABSTRACT:
A semiconductor device comprises a semiconductor substrate, and a plurality of semiconductor elements provided on the semiconductor substrate. Each of the semiconductor elements includes a gate dielectric film formed on the semiconductor substrate, a gate electrode formed on the semiconductor substrate with the gate dielectric film interposed therebetween, and having a pair of side surfaces, and source/drain regions formed in a surface of the semiconductor substrate along the pair of the side surfaces. The gate electrode contains a plurality of crystal grains, and the number of the crystal grains is substantially equal to the number of crystal grains contained in any other gate electrode of all the semiconductor elements.
REFERENCES:
patent: 5381032 (1995-01-01), Kokawa et al.
patent: 5525824 (1996-06-01), Himi et al.
patent: 5600154 (1997-02-01), Shimizu et al.
M. Moniwa, et al., "Preferential nucleation along SiO.sub.2 steps in amorphous Si", Appl Phys Lett, vol. 47, No. 2, Jul. 15, 1985, pp. 113-115.
Ozawa Yoshio
Saida Shigehiko
Abraham Fetsum
Kabushiki Kaisha Toshiba
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