Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-06-01
1998-12-08
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257392, 257402, 257500, 437 29, 437 34, 437 44, 437 45, 437 48, 437913, H01L 2976, H01L 21265
Patent
active
058474323
ABSTRACT:
A semiconductor device to which two kinds of electric voltage can be supplied comprises: a first MOS transistor formed in the first well having a first conduction type and being fixed to a first electric potential, a second MOS transistor formed in a second well having a second conduction type different from the first one and being fixed to a second electric potential higher than the first electric potential, and a third well formed between the first and second wells having the second conduction type and being fixed to a ground electric potential. The first MOS transistor comprises a first gate oxide film having a prescribed thickness and a first gate electrode having a prescribed gate length, while the second MOS transistor comprises a second gate oxide film having a thickness larger than the prescribed thickness of the first gate oxide film and a second gate electrode having a gate length longer than the prescribed thickness of the first gate length.
REFERENCES:
patent: 4866002 (1989-09-01), Shizukuishi et al.
A 0.6.mu.mCMOS SOG with 5V/3.3V Interface, by Masaaki Ohkawa, Toshiro Takahashi, Mikio Yamagishi, Yasuo Sonobe, and Nobuaki Ejima, Device Development Center, Hatachi Ltd., Tokyo, Japan Aug. 1995.
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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