Input protection circuit for semiconductor device

Details Input protection circuit for semiconductor device Input protection circuit for semiconductor device

1997-05-29

1998-12-08

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257357, 257358, 257363, H01L 2362

Patent

active

058474307

ABSTRACT:
Between an external power supply line and an internal power supply line in which an internal power supply potential is transmitted on a substrate region, a high voltage conducting mechanism is provided, which is rendered conductive when a transitional high voltage surge is generated at the external power supply line by electrically connecting the external power supply line and the internal power supply line. Even when the ground line and external power supply line are not arranged parallel to each other, a high voltage conducting mechanism constituted by a field transistor or an insulated gate type field effect transistor having wide width over a long distance can be formed.

REFERENCES:
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 4937639 (1990-06-01), Yao et al.
patent: 4943835 (1990-07-01), Yakushiji et al.
patent: 5235201 (1993-08-01), Honna
patent: 5237187 (1993-08-01), Suwanai et al.

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