Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1997-11-12
1999-09-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257 99, 257103, 372 45, 372 46, H01L 3300
Patent
active
059490934
ABSTRACT:
A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a second first-conduction-type-side electrode formed on the contact layer; and a second-conduction-type-side electrode formed on a bottom surface of the semiconductor substrate, at least a portion of the contact layer underlying the second first-conduction-type-side electrode being changed to a high-resistance region by application of an electric field between the second first-conduction-type-side electrode and the second-conduction-type-side electrode, and the high-resistance region behaving as a current blocking region.
REFERENCES:
patent: 5309001 (1994-05-01), Watanabe et al.
patent: 5544190 (1996-08-01), Mensz
patent: 5585649 (1996-12-01), Ishikawa et al.
patent: 5737350 (1998-04-01), Motoda et al.
patent: 5742629 (1998-04-01), Nishikawa et al.
patent: 5780873 (1998-07-01), Itaya et al.
Mintel William
Sony Corporation
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