Semiconductor device having a thin film capacitor and a resistan

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257301, 257302, 257303, 257304, 257306, 257310, 324523, 324524, 324756, H01L 2968

Patent

active

058474234

ABSTRACT:
A semiconductor device having thin film capacitors and containing resistance measuring elementsis disclosed. The thin film capacitor comprises a bottom electrode, a high permittivity dielectric, and a top electrode stacked on an interlayer insulation film and at least one of a plurality of contact formed in electrical contact with the substrate at the desired position of an interlayer insulation film formed on a semiconductor substrate. The bottom electrode comprises at least two layers. A resistance measuring element consists of the same materials as those of the thin film capacitor and has the same size as that of the thin film capacitor except that the resistance measuring element comprises a first electrode, the dielectric film of high permittivity, and a second electrode stacked on the interlayer insulation film and at least one of a plurality of contacts other than the above-mentioned contact for the thin film capacitor, and the topmost layer of the first electrode and the second electrode are in contact with each other through the contact provided at a portion of the dielectric film. The resistance value of the bottom electrode of the thin film capacitor is measured using electrical path through the substrate.

REFERENCES:
patent: 5398205 (1995-03-01), Yamaguchi
patent: 5541428 (1996-07-01), Nagatomo
By S. Onishi et al., "A Half-Micron Ferroelectric Memory Cell Technology with Stacked Capacitor Structure", 1994 IEEE, pp. 843-846.
By P-Y. Lesaicherre et al., "A Gbit-scale DRAM stacked capacitor technology with ECR MOCVD SrTiO.sub.3 and RIE patterned RuO.sub.2 /TiN storage nodes", 1994 IEEE, pp. 831-834.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device having a thin film capacitor and a resistan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a thin film capacitor and a resistan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a thin film capacitor and a resistan will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-180642

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.