MOS-based active pixel sensor cell that utilizes the parasitic b

Details MOS-based active pixel sensor cell that utilizes the parasitic b MOS-based active pixel sensor cell that utilizes the parasitic b

1997-05-19

1998-12-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257353, 257354, H01L 31062, H01L 31113, H01L 2701, H01L 2712

Patent

active

058474226

ABSTRACT:
A MOS-based active pixel sensor cell utilizes the parasitic bipolar action of the cell to produce a horizontal current in lieu of the vertical image current associated with conventional bipolar-based active pixel sensor cells. Image data is collected during an integration period by applying a negative voltage to the gate of the MOS transistor which is sufficient to reverse-bias both the source/body and drain/body junctions. Following this, the image data is read out by raising the gate voltage such that the source/body junction remains reverse-biased, and the drain/body junction becomes forward-biased. Under these bias conditions, an amplified horizontal image current flows from the source, through the body, and out of the drain.

REFERENCES:
patent: 5065206 (1991-11-01), Nishizawa et al.
patent: 5260592 (1993-11-01), Mead et al.
patent: 5587596 (1996-12-01), Chi et al.
patent: 5591988 (1997-01-01), Arai et al.

Affiliated with

Also associated with

Rating

MOS-based active pixel sensor cell that utilizes the parasitic b does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOS-based active pixel sensor cell that utilizes the parasitic b, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS-based active pixel sensor cell that utilizes the parasitic b will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-180638