Memory device containing electrically conducting substrate havin

Details Memory device containing electrically conducting substrate havin Memory device containing electrically conducting substrate havin

1983-11-16

1987-05-12

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Amorphous

357 2, 357 59, 365184, G11C 1142, G11C 1300

Patent

active

046655042

ABSTRACT:
A memory device comprises an electrically conducting substrate having deposited thereon a layer of an amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material to form a junction. Preferably the silicon-containing material is silicon and the junction is a heterojunction.
The device has fast switching characteristics and good stability.

REFERENCES:
patent: 3600645 (1971-08-01), Berman
patent: 3740620 (1973-06-01), Agusta et al.
patent: 4103312 (1978-07-01), Chang et al.
patent: 4199692 (1980-04-01), Neale
patent: 4459163 (1984-07-01), MacDiarmid et al.

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