Method for fabricating thin-film image sensing devices

Details Method for fabricating thin-film image sensing devices Method for fabricating thin-film image sensing devices

1985-11-26

1987-05-12

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430318, 430319, 430330, 250578, 156650, 156655, 1566591, 156665, 156667, G03C 500

Patent

active

046650083

ABSTRACT:
A method is provided for fabricating thin film amorphous silicon p-i-n photodiode array image sensors that have transparent photodiode electrodes made of indium tin oxide or SnO.sub.2 and thin-film aluminum conductors for connecting the transparent electrodes to signal processing circuitry. The method provides for patterning of the aluminum conductors without eroding the material of the transparent electrodes through reduction of such material by hydrogen gas released during etching of the aluminum by using a photoresist etch mask that covers the areas of the transparent electrodes and defines the pattern of the aluminum conductors.

REFERENCES:
patent: 3941630 (1976-03-01), Larrabee
patent: 4227078 (1980-10-01), Yamamoto et al.
patent: 4336295 (1982-06-01), Smith
patent: 4565928 (1986-01-01), Yamamoto et al.

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