Method and apparatus for manufacturing tape-shaped silicon cryst

Details Method and apparatus for manufacturing tape-shaped silicon cryst Method and apparatus for manufacturing tape-shaped silicon cryst

1985-07-16

1987-05-12

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156608, 156617H, 156DIG88, 156DIG97, 427 86, C30B 1506

Patent

active

046647457

ABSTRACT:
A method for horizontal silicon tape drawing is provided which can be practiced at a high drawing speed. The carrier member uses parallel threads of a material having a higher emission factor .epsilon. than the emission factor of molten silicon and such threads serve as crystallization nucleators for silicon. A silicon melt tank is used which has a length l that is at least as long as the contacting length existing between the surface of molten silicon and the horizontally moving threads so that L=V.sub.z .multidot.t where v.sub.z is the drawing speed and t is the dwell time. The drawing direction d.sub.z is set inclined at an angle .alpha..ltoreq. 10.degree. relative to the horizontal. Radiant losses from the silicon melt surface are regulated by reflectors. The method provides the possibility of manufacturing tape-shaped silicon crystals 16 for solar cells with a constant thickness and width.

REFERENCES:
patent: 4305776 (1981-12-01), Grabmaier
patent: 4319953 (1982-03-01), Grabmaier
patent: 4329195 (1982-05-01), Kudo
patent: 4554203 (1985-11-01), Grabmaier et al.
patent: 4563976 (1986-01-01), Foell et al.
patent: 4563979 (1986-01-01), Falckenberg
Bates and Jewett article entitled: "Low Angle Silicon Sheet Growth: A Review of Progress, Problems and Promise," appearing in Proceedings of the Flat-Plate Solar Array Project Research Forum on the High-Speed Growth and Characterization of Crystals for Solar Cells dated Apr. 15, 1984, identfied as JPL Publication 84-23.

Affiliated with

Also associated with

Rating

Method and apparatus for manufacturing tape-shaped silicon cryst does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for manufacturing tape-shaped silicon cryst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for manufacturing tape-shaped silicon cryst will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1800281