Random access monostable memory cell having both static and dyna

Details Random access monostable memory cell having both static and dyna Random access monostable memory cell having both static and dyna

1976-08-17

1979-01-09

Konick, Bernard

Static information storage and retrieval

Read/write circuit

Data refresh

365154, G11C 700, G11C 1140

Patent

active

041341503

ABSTRACT:
Memory cells in a random access memory system are addressed through associated X and Y address lines. Each memory cell is operable as a static memory device to represent "1" binary data in response to a first control potential applied to the associated X address line and a first data input potential applied to the associated Y address line and further operable as a nonstatic memory device to represent "0" binary data in response to the first control potential applied to the X address line and to a second data input potential applied to the Y address line. Means are provided to refresh the stored "0" binary data by simultaneously applying a second control potential lower than the first control potential to all of the X address lines at periodic intervals and simultaneously therewith applying the second data input potential to all of the Y address lines.

REFERENCES:
patent: 3618053 (1971-11-01), Hudson et al.
patent: 3644907 (1972-02-01), Gricchi et al.
patent: 3858185 (1974-12-01), Reed
patent: 3968479 (1976-07-01), Goser
patent: 3997881 (1976-12-01), Hoffman

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