Semiconductor memory device and method of forming the same

Details Semiconductor memory device and method of forming the same Semiconductor memory device and method of forming the same

1994-12-14

1996-07-16

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Simultaneous operations

36523001, G11C 1300

Patent

active

055373542

ABSTRACT:
A method of making an SDRAM (synchronous dynamic random access memory) into either a low-speed type or a high-speed type includes the steps of determining an electrical connection of a predetermined electrode of the SDRAM, and providing the predetermined electrode with a voltage level defined by the electrical connection, the voltage level determining whether the SDRAM is made into the low-speed type or the high speed type, wherein the low-speed type can carry out consecutive writing operations at a low clock rate for two addresses having the same row address, and the high-speed type can carry out simultaneous writing operations at a high clock rate for two addresses having the same row address and consecutive column addresses.

REFERENCES:
patent: 4646271 (1987-02-01), Uchiyama et al.

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