Semiconductor memory device obtaining high bandwidth and signal

Details Semiconductor memory device obtaining high bandwidth and signal Semiconductor memory device obtaining high bandwidth and signal

1994-11-30

1996-07-16

Nelms, David C.

Static information storage and retrieval

Format or disposition of elements

365 63, G11C 502

Patent

active

055373461

ABSTRACT:
A semiconductor memory device architecture and method thereof obtains a high data bandwidth by forming multiple input/output lines. A unit array has a plurality of reference blocks formed in a length direction of the device, each reference block storing a plurality of memory cells. A sub array has a plurality of unit arrays formed in a longitudinal direction perpendicular to the length direction. A word line selects memory cells from within the reference blocks, the word line extending in the length direction. A pair of bit lines and a pair of data input/output lines extend in the longitudinal direction. The pair of data input/output lines are correspondingly connected to 2.sup.n (n=1,2, . . . ) pairs of bit lines. A read select signal line selects a pair of bit lines from among 2.sup.n pairs of bit lines connected to one pair of data input/output lines in response to an input of a column address during a read operation. A write select signal line selects a pair of bit lines from among 2.sup.n pairs of bit lines connected to one pair of data input/output lines in response to an input of a column address during a write operation. A column gate connects the pair of bit lines to the pair of data input/output lines. A column select line extends in the longitudinal direction and controls the column gate, and a pair of main data input/output lines are connected correspondingly through a multiplexer to a plurality of data input/output lines.

REFERENCES:
patent: 5021998 (1991-06-01), Suzuki
patent: 5291432 (1994-03-01), Furutani
patent: 5293559 (1994-03-01), Kim
patent: 5321646 (1994-06-01), Tomishima
patent: 5418737 (1995-05-01), Tran
patent: 5426615 (1995-06-01), Tomishima

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