Cell plate voltage generator of a semiconductor memory device

Details Cell plate voltage generator of a semiconductor memory device Cell plate voltage generator of a semiconductor memory device

1998-06-11

2000-06-27

Nelms, David

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

36518909, 365149, 365226, 365530, 365534, G11C 1604

Patent

active

060814594

ABSTRACT:
A cell plate voltage generator of a semiconductor memory device for selectively providing a cell plate potential having various voltages to thereby substantially reduce the time required for a burn-in test includes a half Vdd generation block for producing a half voltage having a half of an external potential inputted from outside of the semiconductor memory device; a Vbb generation block for generating a negative voltage; a cell plate voltage selection block for generating a plurality of control signals; a transmission block having a plurality of transmission circuits for delivering selectively the half voltage, the negative voltage, the source voltage, and the ground voltage in accordance with the control signals; and a level shifter for level shifting at least two of the control signals in order to avert the voltage drop in threshold voltages of the transmission circuits.

REFERENCES:
patent: 4769784 (1988-09-01), Doluca et al.
patent: 4799193 (1989-01-01), Horiguchi et al
patent: 5305270 (1994-04-01), Kim
patent: 5317532 (1994-05-01), Ochii
patent: 5500824 (1996-03-01), Fink
patent: 5557571 (1996-09-01), Kato
patent: 5777934 (1998-07-01), Lee et al.

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