Dynamic random access memory device having power supply system a

Static information storage and retrieval – Read/write circuit – Testing

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Details

36518909, 365226, 327530, 327538, G11C 1300

Patent

active

053633334

ABSTRACT:
A power supply system incorporated in a dynamic random access memory device distributes a step-down power voltage and a boosted voltage to a sense amplifier unit and a word line driver for allowing switching transistors of the memory cells to transfer the step-down voltage level to the storage capacitor without any voltage drop in read-out and write-in modes, and the switching transistors and the storage capacitors are subjected to inspections through a burn-in testing process before delivery from the manufacturing factory so as to actualize potential failure; however, either switching transistors or storage capacitors are insufficiently stressed in the burn-in testing process, and the power supply system changes the ratio of the boosted voltage to the step-down power voltage between the read-out and write-in modes and the burn-in testing process so that the switching transistors and the storage capacitors are sufficiently stressed.

REFERENCES:
patent: 5249155 (1993-09-01), Arimoto
patent: 5268871 (1993-12-01), Dhong
patent: 5283762 (1994-02-01), Fujishima

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