Semiconductor memory device for use in an electrically alterable

Details Semiconductor memory device for use in an electrically alterable Semiconductor memory device for use in an electrically alterable

1993-11-10

1994-11-08

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Semiconductive

365100, 365113, 365148, 365163, 257 2, 257 3, 257 4, 257 5, G11C 1140, G11C 1304

Patent

active

053633296

ABSTRACT:
This disclosure relates to an electrically alterable memory device which can be switched from a high resistance state to a low resistance state. The device increases the concentration of electrically active impurities at correspondent electrode to which respective impurities would migrate during a large number of set-reset cycles. This lessens the decline in the threshold voltage caused by the electromigration of those impurities. The device includes a layered structure in which a layer rich in electrically active impurities is placed between memory material layer and its respective electrode and another layer. A fitted thin layer of dielectric is placed between a memory material layer and the other electrode. The memory layer includes an interface of chalcogenide films. A tellurium layer with a concentration of electrically active impurity 2.5%-4.5% is placed between the memory layer and one of the electrodes while a germanium and tellurium or stanus and tellurium layer, with approximate percentage 1:1 and containing an intermediate layer of dielectric having fitted negative charge not less than 10.sup.19 sm.sup.-3, is placed between the memory layer and the other electrode.

REFERENCES:
patent: 4203123 (1980-05-01), Shanks

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