Semiconductor memory device having crossed word lines, and metho

Details Semiconductor memory device having crossed word lines, and metho Semiconductor memory device having crossed word lines, and metho

1993-01-13

1994-11-08

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

257296, 257306, 365182, G11C 1124, H01L 2978

Patent

active

053633261

ABSTRACT:
A main portion of a first word line extends in a direction connecting one diffusion region to the other diffusion region of an access transistor and is located between memory cells, and diverging portions of the first word line alternately extend from both sides of the main portion of the first word line to corresponding adjacent memory cells. A bit line extends in a direction perpendicular to the direction connecting one diffusion region to the other diffusion region, and a second word line extends along the diverging portion of the first word line. When stored data is to be read out from a memory cell, a positive voltage is applied to one first word line corresponding to the memory cell whose data is to be read out, and a zero voltage is applied to the remaining first word lines. Furthermore, a zero voltage is applied to one second word line corresponding to the memory cell whose data is to be read out, and a negative voltage which cancels the positive voltage applied to the first word line is applied to the remaining second word lines.

REFERENCES:
patent: 4962476 (1990-10-01), Kawada
patent: 4970564 (1990-11-01), Kimura
patent: 5025294 (1991-06-01), Ema
patent: 5091761 (1992-02-01), Hiraiwa
patent: 5194753 (1993-03-01), Rhodes

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