Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-20
1996-10-29
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, H01L 2976, H01L 27108
Patent
active
055699480
ABSTRACT:
A semiconductor device having a structure capable of obtaining an increased alignment margin for a mask without any increase in the area of the semiconductor device by forming a contact plug on a drain while forming a contact pad on a source without forming contact plugs on both the source and the drain in a simultaneous manner, and a method for fabricating the semiconductor device. The contact pad has an upper portion partially overlapping with a portion of an insulating film surrounding a contact hole in which the contact pad is buried. Accordingly, it is possible to easily carry out the contact process.
REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5237187 (1993-08-01), Suwanai et al.
patent: 5281838 (1994-01-01), Okumura et al.
patent: 5386382 (1995-01-01), Ahn
Fahmy Wael M.
Hyundai Electronics Industries Co,. Ltd.
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