Stepped floating gate EPROM device

Details Stepped floating gate EPROM device Stepped floating gate EPROM device

1995-02-13

1996-10-29

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257326, H01L 29788

Patent

active

055699456

ABSTRACT:
Fabrication of a MOSFET comprises, forming a dielectric layer on a substrate and a sacrificial structure on portions of the dielectric layer, forming a first polysilicon layer over the sacrificial structure and other exposed surfaces of the device, patterning the first polysilicon layer and the dielectric layer by masking and etching to form a stepped electrode structure partially upon the sacrificial structure and partially upon the other exposed surfaces of the device, applying ion implantation into the substrate outside of the area covered by the stepped electrode structure, removing the sacrificial laver from the surface of the substrate and from beneath the stepped electrode structure leaving an overhanging surface of the stepped electrode structure, forming a second layer of dielectric material on the exposed surfaces of the stepped electrode structure and the substrate, and forming a second polysilicon layer over and under overhanging portions the second layer of dielectric material and the substrate.

REFERENCES:
patent: 4373248 (1983-02-01), McElroy
patent: 4988635 (1991-01-01), Ajika et al.
patent: 5045488 (1991-09-01), Yeh
patent: 5057886 (1991-10-01), Riemenschneider et al.

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