Manufacture of cadmium mercury telluride

Details Manufacture of cadmium mercury telluride Manufacture of cadmium mercury telluride

1982-09-30

1987-03-17

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118725, 252 623R, 252 623ZT, 423561B, 427 87, 4272552, 156DIG72, 156DIG82, C23C 1308, H01L 2104, C04B 3500

Patent

active

046505393

ABSTRACT:
A layer of Cd.sub.x Hg.sub.1-x Te is grown on the surface of a substrate by decomposing alkyls of cadmium and telluride in a mercury atmosphere. The substrate is placed in a vessel containing a mercury bath with the vessel and bath at a suitable pressure and a temperature below the alkyl decomposition temperature. Hydrogen is passed through bubblers separately containing alkyls of cadmium, telluride and, if required, a dopant into the vessel. The substrate is independently heated above the temperature of the vessel so that the alkyls decompose on the substrate. The substrate may be CdTe, a II-VI compound or mixed II-VI alloy. The alkyls may be dimethyl cadmium, diethyl cadmium, dipropyl cadmium, dimethyl telluride, diethyl telluride, dipropyl telluride, dibutyl telluride etc., or hydrogen substituted tellurium alkyls such as hydrogen ethyl telluride etc.

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patent: 3779803 (1973-12-01), Lee et al.
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Willardson et al, v 18, Semiconductors and Semimetals, 1981, Academic Press.
The Use of Metal-Organics in the Preparation of Semiconductor Materials, Manasevit et al, J. Electrochem. Soc. Solid State Sci., vol. 118, Apr. 71, pp. 644-647.
Kuech et al, "Low Temperature CVD Growth of Epitaxial ThTe on CdTe", J. Electrochem. Soc.: Solid-State Science and Technology, May 1981, vol. 128, No. 5, pp 1142-1144.

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