Composite trench-fin capacitors for DRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257301, 257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060810084

ABSTRACT:
A semiconductor memory device capacitor is disclosed which has a trench capacitor portion provided in a semiconductor substrate and a fin capacitor portion provided above the substrate. The trench capacitor portion includes (i) a trench extending from an upper surface of the semiconductor substrate downwardly into the substrate, and (ii) an electrically conductive trench electrode provided interior to the trench. And the fin capacitor portion includes (i) a fin electrode having a body portion and two or more electrically conductive fins extending outwardly from the body portion, (ii) a fin dielectric layer conformally coating the two or more electrically conductive fins, and (iii) a cell electrode surrounding and in intimate contact with the two or more electrically conductive fins.

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patent: 5234856 (1993-08-01), Gonzalez
patent: 5455192 (1995-10-01), Jeon
patent: 5585303 (1996-12-01), Hong et al.
"3-Dimensional Stacked Capacitor Cell for 16M and 64M Drams", by T. Ema, S. Kawanago, T. Nishi, S. Yoshida, H. Nishibe, T. Yabu, Y. Kodama, T. Nakano and M. Taguchi; Tachincal Digest, CH2528-8/88/0000-0592, 1988 IEEE.
"A Spread Stacked Capacitor (SCC) Cell For 64Mbit Drams", by S. Inoue, K. Hieda, A. Nitayama, F. Horiguchi and F. Masouka; Technical Digest, CH2637-7/89/000-0031, 1989 IEEE.
"Advanced Cell Structures for Dynamic RAMs", by Nicky C.C. Lu, IEEE Circuits and Devices Magazine, Jan. 1989.

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