Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-20
2000-06-27
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257301, 257296, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
060810084
ABSTRACT:
A semiconductor memory device capacitor is disclosed which has a trench capacitor portion provided in a semiconductor substrate and a fin capacitor portion provided above the substrate. The trench capacitor portion includes (i) a trench extending from an upper surface of the semiconductor substrate downwardly into the substrate, and (ii) an electrically conductive trench electrode provided interior to the trench. And the fin capacitor portion includes (i) a fin electrode having a body portion and two or more electrically conductive fins extending outwardly from the body portion, (ii) a fin dielectric layer conformally coating the two or more electrically conductive fins, and (iii) a cell electrode surrounding and in intimate contact with the two or more electrically conductive fins.
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"Advanced Cell Structures for Dynamic RAMs", by Nicky C.C. Lu, IEEE Circuits and Devices Magazine, Jan. 1989.
LSI Logic Corporation
Meier Stephen D.
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