Semiconductor device with light reflecting substrate area

Details Semiconductor device with light reflecting substrate area Semiconductor device with light reflecting substrate area

1993-05-21

1996-07-16

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Flip chip

257797, 257 98, 257 99, H01L 2348

Patent

active

055369740

ABSTRACT:
A semiconductor device having a high packaging yield is disclosed. A light directed to a light reflection area (20) formed on a packaging substrate (10) is reflected with an accurate angle. A light directed to a second light reflection area (50) formed on a semiconductor chip (40) is also reflected with an accurate angle. A relative inclination between the packaging substrate (10) and the semiconductor chip (40) is measured based on the reflection angles of the reflected lights.

REFERENCES:
patent: 4640888 (1987-02-01), Itoh et al.
patent: 4899921 (1990-02-01), Bendat et al.
patent: 5022580 (1991-06-01), Pedder
patent: 5153707 (1992-10-01), Makino et al.
patent: 5214272 (1993-05-01), Ueno
Patent Abstracts of Japan, vol. 6, No. 144 (E-122)(1022) Aug. 3, 1982 & JP-A-57 068 058 (Hitachi Seisakusho K.K.) * abstract *.
Patent Abstracts of Japan, vol. 10, No. 95 (E-395)(2152) Apr. 12, 1986 & JP-A-60 239 050 (Sharp K.K.) * abstract *.
Patent Abstracts of Japan, vol. 5, No. 192 (E-85)(864) Dec. 8, 1981 & JP-A-56114343 (Terumetsuku K.K.) * abstract *.

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