Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1994-05-11
1996-07-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257418, 257419, 257420, 73720, H01L 2982
Patent
active
055369634
ABSTRACT:
A micromechanical structure or microactuator based upon the piezoelectric, pyroelectric, and electrostrictive properties of ferroelectric thin film ceramic materials such as PZT with a thickness between 0.1 and 10 micrometers. The thin film ceramic material is sandwiched between first and second electrodes and may contain an intermediate electrically insulating thin film. This structure with electrodes is formed on a deformable or movable structure integral to a semiconductor or bulk ceramic substrate. Electrical connection is established between the upper and lower electrodes. A potential difference or voltage is established between the electrical interconnection points to produce a force, movement, or mechanical deformation. The invention also relates to a method for making such micromechanical structures or microactuators.
REFERENCES:
patent: 2478223 (1949-08-01), Argabrite
patent: 5209119 (1993-05-01), Polla et al.
Yi, G., et al., IEEE 1989 Ultrasonics Symposium Proceedings, vol. 2, Oct. 3-6, 1989 pp. 1231-1235.
Goral, J. P., et al., Thin Solid Films, 193/194 (1990) Nos. 1/2, pp. 1017-1022.
Tamagawa, T., et al., IEEE 1990 IEDM: Detectors, Sensors and Displays, 1990, pp. 1-3.
Mintel William
Regents of the University of Minnesota
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