Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-05-02
1996-07-16
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, H01L 2362
Patent
active
055369588
ABSTRACT:
A semiconductor device is presented having an improved high voltage protection scheme that comprises an integrated Schottky diode (28) in conjunction with a plurality of back to back diodes (29) to limit a voltage potential that may arise between the gate (26) and drain terminals (27) of a semiconductor device. A second embodiment comprises a contact region (43) connected to a plurality of back to back diodes (46) configured so that some of the voltage is supported by the back to back diodes (46) and the remainder is supported by the substrate (39). These structures will support any excess voltage in the conduction mode, rather than the avalanche mode and may employ the use of a depletion region (51) to support a blocking voltage.
REFERENCES:
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 4774560 (1988-09-01), Coe
patent: 5365099 (1994-11-01), Phipps et al.
T. Yamazaki et al., "The IGBT with Monolithic Overvoltage Protection Circuit", 5th International Symposium on Power Semiconductor Devices and ICs, May 1993, Monterey, California, pp. 41-45.
Robb Stephen P.
Shen Zheng
Meier Stephen D.
Motorola Inc.
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