Process for etching copper containing metallic film and for form

Details Process for etching copper containing metallic film and for form Process for etching copper containing metallic film and for form

1995-07-25

1996-10-29

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

1566571, 437238, 437187, 437195, H01L 21306

Patent

active

055696279

ABSTRACT:
A method for forming a copper wiring in a semiconductor device utilizes a copper film with a pattern mask thereon. Exposed portions of the copper film are etched to form a copper wiring. An insulation film is deposited over the copper wiring, including on side walls thereof. A portion of the insulation film is removed to leave an insulation film substantially only on side walls of the copper which is thinner than before the removing. A first dielectric film is formed between the copper wiring up to a top of the pattern mask but not on top of the pattern mask in order to embed and flatten regions between the copper wiring and pattern mask so that the regions are substantially level with the top of the pattern mask. A second dielectric layer is formed on the first dielectric layer to provide a flat surface over the copper wiring and pattern mask.

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patent: 5445998 (1995-08-01), Zimmer
"Silicon Processing For TRe VLSI Era-vol.2-Process Integration", Wolf; Lattice Press, Sunset Beach, California; .COPYRGT. 1990; pp. 192-194.

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