Method of manufacturing multiple polysilicon TFTs with varying d

Details Method of manufacturing multiple polysilicon TFTs with varying d Method of manufacturing multiple polysilicon TFTs with varying d

1994-03-08

1996-10-29

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437101, 437174, H01L 2184

Patent

active

055696104

ABSTRACT:
Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous silicon film. This amorphous silicon film is selectively irradiated with laser light or other equivalent intense light to crystallize the amorphous silicon film.

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Ghandhi, "VLSI Fabrication Principles Silicon and Gallium Arsenide", John Wiley and Sons, pp. 163-164, 1983.

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