Method of making a doped silicon diffusion barrier region

Details Method of making a doped silicon diffusion barrier region Method of making a doped silicon diffusion barrier region

1996-10-29

2000-06-27

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438588, 438591, 438592, H01L 213205

Patent

active

060806451

ABSTRACT:
Methods and apparatus are discussed for forming word line stacks formed of a silicon diffusion barrier region, doped with oxygen or nitrogen, coupled between a bottom silicon layer and a conductor layer. Word line stacks formed by the methods of the invention are used in sub-0.25 micron line width applications and have a lower resistivity and improved thermal stability.

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