Method of forming a complex film over a substrate having a speci

Details Method of forming a complex film over a substrate having a speci Method of forming a complex film over a substrate having a speci

1995-06-07

1998-02-17

Trinh, Michael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438197, 438647, 438655, H01L 218232, H01L 2144

Patent

active

057190836

ABSTRACT:
Disclosed is a method and an apparatus for making devices with low barrier height. In fabricating an n-channel and p-channel devices, hemisphere grains, silicon crystal grains and metal silicide crystal grains are formed on a contact-hole or a gate electrode on an insulating film in each semiconductor element, so that it becomes possible to control the work function, to reduce the contact resistance, and to control the threshold voltage V.sub.th.

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